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Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MD7IC18120N/GN wideband integrated circuit is designed with on--chip
matching that makes it usable from 1805 to 1880 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats.
? Typical Doherty Single--Carrier W--CDMA Performance: V DD = 28 Volts,
I DQ1A = 70 mA, I DQ1B = 160 mA, I DQ2B = 500 mA, V GS2A = 1.7 Vdc, P out =
30 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz,
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Document Number: MD7IC18120N
Rev. 0, 5/2010
MD7IC18120NR1
MD7IC18120GNR1
1805--1880 MHz, 30 W AVG., 28 V
SINGLE W--CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
Frequency
1805 MHz
1840 MHz
1880 MHz
G ps
(dB)
25.7
25.7
25.8
PAE
(%)
36.7
36.3
35.3
Output PAR
(dB)
6.9
6.9
6.7
CASE 1866--02
TO--270 WBL--16
PLASTIC
MD7IC18120NR1
? Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 140 Watts CW
Output Power
? Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 100 Watts CW P out
? Typical P out @ 1 dB Compression Point ? 120 Watts CW
Features
? Production Tested in a Symmetrical Doherty Configuration
? 100% PAR Tested for Guaranteed Output Power Capability
? Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
? On--Chip Matching (50 Ohm Input, DC Blocked)
? Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
? Integrated ESD Protection
? Greater Negative Gate--Source Voltage Range for Improved Class C Operation
? 225 ° C Capable Plastic Package
? RoHS Compliant
? In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
CASE 1867--02
TO--270 WBL--16 GULL
PLASTIC
MD7IC18120GNR1
V DS1A
V GS2A
V GS1A
RF inA
RF inB
Quiescent Current
Temperature Compensation (1)
PEAKING (2)
RF outA /V DS2A
RF outB /V DS2B
CARRIER (2)
N.C.
V DS1A
V GS2A
V GS1A
N.C.
RF inA
N.C.
N.C.
RF inB
N.C.
V GS1B
V GS2B
V DS1B
N.C.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
16
15
RF outA /V DS2A
RF outB /V DS2B
V GS1B
V GS2B
V DS1B
Quiescent Current
Temperature Compensation (1)
Figure 1. Functional Block Diagram
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family . Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
2. Peaking and Carrier orientation is determined by the test fixture design.
? Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MD7IC18120NR1 MD7IC18120GNR1
1
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